Room‐Temperature Phosphorescence in Metal‐Free Organic Materials

Purely organic materials with room‐temperature phosphorescence (RTP) have attracted a growing interest for their potential applications in biological imaging, digital encryption, optoelectronic devices, and so on. To date, many strategies have succeeded in designing efficient organic RTP materials by overcoming the spin‐forbidden transition between singlet and triplet states. However, the underlying mechanisms of RTP still remain ambiguous. Such spin prohibition in phosphorescence are clarified, herein, from the perspective of perturbation theory, helping to understand the intrinsic relationship among various phosphorescence parameters, like phosphorescence efficiency, lifetime, intersystem crossing rate, as well as radiative and nonradiative rates. Taking into consideration the recent progress in organic RTP materials, these factors are further illustrated by a selection of the most relevant molecules. In addition, some novel RTP phenomena are also reviewed, thus providing an excellent guideline to constructing efficient RTP materials.     

长余辉材料SrAl2O4 ∶ Eu,Dy中Eu的 价态变化及对发光性能的影响

采用高温固相法,先在空气气氛下制备了SrAl₂O₄ ∶ Eu,Dy,后对其进行还原→氧化→还原处理。X射线衍射结果表明,经过还原→氧化→还原处理后样品的晶体结构没有改变。样品的发射光谱测试表明,在高温空气气氛下有少量的Eu³⁺还原成Eu²⁺。Eu³⁺和Eu²⁺有不同的发光特性,Eu³⁺产生的是线状特征光谱,发射峰值在592,616 nm。Eu²⁺产生的是带状光谱,带的中心位置在513 nm。经过还原处理的样品和经过氧化处理的样品相比,Eu²⁺的浓度得到显著提高,而Eu³⁺的浓度则急剧下降。对Eu²⁺的氧化、Eu³⁺的还原的机理进行了细致地讨论。另外,样品的热释光谱测试表明,经过氧化气氛处理和经过还原气氛处理过的样品的热释光峰值有很大的变化,但陷阱能级深度基本不变,在0.65 eV左右。这表明,对长余辉材料SrAl₂O₄ ∶ Eu,Dy进行还原→氧化→还原处理,Eu离子价态和发光强度会产生变化,并不影响其中Dy离子的陷阱能级。     

Comparison study of the luminescent properties of the white-light long afterglow phosphors: CaxMgSi2O5+x:Dy(x=1, 2, 3)

A series of Dy³⁺-doped calcium magnesium silicate phosphors: CaMgSi₂O₆:Dy³⁺, Ca₂MgSi₂O₇:Dy³⁺, and Ca₃MgSi₂O₈:Dy³⁺ with white long-lasting afterglow were prepared and investigated. The characteristic intra-configurational 4f emissions of Dy³⁺ were observed in the emission spectra as well as the afterglow spectra under ultraviolet excitation. The combination of the 480 nm blue emission corresponding to the ⁴F_9/2→⁶H_15/2 transition and the 575 nm yellow emission corresponding to the ⁴F_9/2→⁶H_13/2 transition yielded white-light emission. The white-coloured afterglow emission can last more than 1 h for most of the samples under study. The concentration dependence of the ratio of the yellow emission intensity with blue emission intensity was also examined and found to be varied for the different hosts. The thermoluminescence spectra above room temperature are employed for the discussion of the origin of the traps and the mechanism of the persistent luminescence.     

长余辉发光材料研究进展

长余辉发光材料是一类重要的光-光转换和节能材料。这类材料在工农业生产、军事、消防和人们生活的许多方面得到广泛应用。本文主要结合本课题组近年在长余辉发光材料领域的研究工作,综述长余辉发光材料的研究进展,并对今后的发展方向进行展望。     

不同激发波长对Sr3Al2O6∶Eu2+,Dy3+红色长余辉发光材料发射光谱的影响

采用高温固相法合成了Sr3Al2O6∶Eu2+,Dy3+长余辉发光材料。用X射线衍射仪及荧光分光光度计对材料物相及光谱性能进行了分析。结果表明:所得样品为Sr3Al2O6的纯相,在360nm波长的激发下,得到波峰为537nm的宽带发射光谱;在468nm波长的激发下,得到波峰为590nm的宽带发射光谱;在波长为394nm的激发下,537和590nm的峰同时出现。根据晶格场效应和电子云膨胀效应,对不同激发波长对Sr3Al2O6∶Eu2+,Dy3+发射光谱的影响进行了解释。结果表明:在Sr3Al2O6∶Eu2+,Dy3+中发光中心因其5d能级劈裂幅度不同及4f65d1能带重心不同而导致发光颜色的不同。     

Etching of polyethylene terephthalate thin films by neutral oxygen atoms in the late flowing afterglow of oxygen plasma

Films of polyethylene terephthalate were deposited on quartz crystals and exposed to oxygen atoms to study their etching characteristics and quantify the etching rate. Oxygen (O) atoms were created by passing molecular oxygen through plasma created in a microwave discharge. The discharge power was fixed at 250 W, while the pressure of oxygen was 50 Pa. Before exposure to oxygen atoms, a thin polymer film of polyethylene terephthalate (PET) was deposited uniformly over a crystal with a diameter of 12 mm. The crystal was mounted on a quartz crystal microbalance to accurately determine the thickness of the polymer film. The polymer film was exposed to O atoms in the flowing afterglow. The density of O atoms was measured with a cobalt catalytic probe mounted next to the sample and was determined to be 1.2 × 10²¹ m^–3. Samples were treated with O atoms for different periods of up to 120 min. The thickness of the film decreased linearly with treatment time. After 90 min of treatment, a 65‐nm‐thick polymer film was completely removed. Therefore, the etching rate was 0.5 nm/min, so the interaction probability between an O atom and an atom in the sample was extremely low, just 1.4 × 10^–6. Samples treated for different periods were investigated by atomic force microscopy and X‐ray photoelectron spectroscopy to examine the etching characteristics of O atoms in the flowing afterglow. Copyright © 2012 John Wiley & Sons, Ltd.     

Afterglow工作模式下ECR离子源脉冲束的产生

为满足国家大科学工程兰州重离子冷却储存环的要求,在14.5GHz ECR 离子源上进行afterglow工作模式的实验,首次产生了高电荷态脉冲束流Ar¹¹⁺和Ar¹²⁺,给出了初步实验结果,并对结果进行了分析和解释.     

An Investigation of the Positive Column of a Cd–Ne Glow Discharge: II. Afterglow

The afterglow of a Cd–Ne glow discharge is investigated theoretically and experimentally. The time-dependent electron Boltzmann equation and the balance equations for the Cd excited states and charged particles have been self-consistently solved. The temporal relaxation of the electron energy distribution function, electron, and cadmium excited states densities is reported and the influence of neon and cadmium vapor pressure on the plasma characteristics in the afterglow is studied. The modeling compares favorably with experimental results.     

Ar (3P0,2 )与SO2反应产生SO (A″ 3Σ+)的光谱

On the flowing afterglow apparatus, in the energy transfer reaction between Ar (3P0,2) and SO2, two series of spectra were observed at two different downstream optical windows from the discharge region. According to the data obtained in this group’s report on the discharge of the mixture of Ar with SO2 and spectral simulation, the two spectrum progressions in the range of 320 and 600 nm were assigned to SO (A″3Σ+→X 3Σ-) and SO (c 1Σ-→X 3Σ-), respectively. The spectroscopic constants for the new electronic state were obtained by spectral simulation based on the method of the least square and shown as follows: T00 =(30460±18.0) cm-1, ωe′=(685±0.8) cm-1 and ωe′χe′=(7.7±8.0) cm-1.     

Pb在锗酸镉基质中的长余辉发光特性

通过高温固相反应在空气中制得单相Cd₂Ge₇O₁₆:Pb²⁺长余辉发光材料.分析了Cd₂Ge₇O₁₆和Cd₂Ge₇O₁₆:Pb²⁺的激发光谱和发射光谱,指出Pb²⁺的发光是该离子的³P₁-¹S₀跃迁产生的;分析了Cd₂Ge₇O₁₆:Pb²⁺的发光存在基质对Pb²⁺的能量传递;并把长余辉性质归结为基质中Cd离子的挥发产生的空穴陷阱.提出了长余辉发光机理模型.